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Ordering number : ENA1177
EFC4606
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4606
Features
* * *
General-Purpose Switching Device Applications
2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Channel Temperature Storage Temperature Symbol VSSS VGSS IS ISP PT Tch Tstg PW100s, duty cycle1% When mounted on ceramic substrate (5000mm20.8mm) Conditions Ratings 24 12 6 60 1.6 150 --55 to +150 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)SSS ISSS IGSS VGS(off) yfs RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 Conditions IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=1.5A, VGS=3.1V IS=1.5A, VGS=2.5V Test Circuit 1 Test Circuit 1 Test Circuit 2 Test Circuit 3 Test Circuit 4 Test Circuit 5 Test Circuit 5 Test Circuit 5 Test Circuit 5 0.5 5.3 22 23 26 30.5 8.9 30 32 35 41 38 41 45 57.5 Ratings min 24 1 10 1.3 typ max Unit V A A V S m m m m
Static Source-to-Source On-State Resistance
Marking : FF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
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92408PF TI IM TC-00001623 No. A1177-1/6
EFC4606
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Forward Source-to-Source Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg VF(S-S) Conditions VSS=10V, f=1MHz VSS=10V, f=1MHz VSS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VSS=10V, VGS=4.5V, IS=6A IS=6A, VGS=0V Test Circuit 6 Test Circuit 8 Test Circuit 8 Test Circuit 8 Test Circuit 7 Test Circuit 7 Test Circuit 7 Test Circuit 7 Ratings min typ 1050 170 124 22 92 205 141 13 1 1.2 max Unit pF pF pF ns ns ns ns nC V
Package Dimensions
unit : mm (typ) 7059-001
Electrical Connection
1
1.81 4 3
2
1.81
3
1 2
0.28
4
0.27
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2
0.65
1
0.65
2
4
3 0.37
1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 SANYO : EFCP1818-4CA-055-1
No. A1177-2/6
EFC4606
Test Circuits are example of measuring FET1 side
Test Circuit 1 VSSS / ISSS
S2
Test Circuit 2 IGSS (+) / (--)
S2
G2
G2
G1
G1
S1
IT11565
S1
IT11566
Test Circuit 3 VGS (off)
S2
Test Circuit 4 yfs
S2
G2
G2
G1
10V 1mA
G1
S1
IT11567
S1
IT11568
Test Circuit 5 RSS (on)
S2
Test Circuit 6 VF (S-S)
S2
4.5V
G2
G2
G1
G1
S1
IT11569
S1
IT11570
Test Circuit 7 td (on), tr, td (off), tf
VDD=10V IS=3A RL=3.33 V S1 OUT
VIN
G1
PW=10s D.C.1%
G2
S2
IT11571
* Note: Connect the mesurement terminal reversely if you want to measure the FET2 side.
No. A1177-3/6
EFC4606
Test Circuit 8 Ciss
S2 G2
Coss
S2
G2
Capacitance bridge
G1
Capacitance bridge
G1
S1
IT11972
S1
IT11973
Crss
S2 G2
Capacitance bridge
G1
S1
IT11974
* Note: Connect the mesurement terminal reversely if you want to measure the FET2 side.
10 9 8
6.0
IS -- VSS
10.0V 4.5 V
IS -- VGS
VSS=10V
5.5 5.0
Source Current, IS -- A
4.0
Source Current, IS -- A
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
V
3.1V 2.5 V
7 6 5 4
.5V V SS=1
1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0 0.5 1.0
--25 C
1.5
2
Ta= 7
25C
3
5C
2.0
2.5 IT13589
Source-to-Source Voltage, VSS -- V
100
IT14034 80
RSS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
RSS(on) -- Ta
Ta=25C
Static Source-to-Source On-State Resistance, RDS(on) -- m
80 70
IS=1.5A 3A
Static Source-to-Source On-State Resistance, RSS(on) -- m
90
70 60 50 40 30 20 10 0 --50
60 50 40 30 20 10 0 0 2 4 6 8 10 IT13590
1.5A I S= 5V, 1.5A =2. I= V GS 3.1V, S = VGS 3.0A .0A , I S= I =3 4.5V .0V, S = =4 VGS VGS
0
50
100
150
200 IT13591
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
No. A1177-4/6
EFC4606
10
yfs -- IS
VSS=10V
25C
2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
IS -- VF(S-S)
VGS=0V
Forward Transfer Admittance, yfs -- S
7
5
2 =-Ta
3
C 5
75
C
2
Source Current, IS -- A
1.0 0.1
0.01 7 5 3 2 0.001 0 0.2
2
3
5
7
1.0
2
3
5
Source Current, IS -- A
1000 7
7 10 IT13592 3
Tc=75 C 25C --25 C
0.4 0.6
0.8
1.0
1.2
1.4
SW Time -- IS
Forward Source-to-Source Voltage, VF(S-S) -- V IT13963
Ciss, Coss, Crss -- VSS
Switching Time, SW Time -- ns
5 3 2
VSS=10V VGS=4.5A
f=1MHz
2
td(off)
tf
Ciss, Coss, Crss -- pF
Ciss
1000 7 5 3 2
100 7 5 3 2
tr
td(on)
100
Coss Crss
10 0.01
7 2 3 5 7 0.1 2 3 5 7 1.0 2 3
Source Current, IS -- A
4.5 4.0 3.5
5 7 10 IT13810 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2
0
1
2
3
4
5
6
7
8
9
10
VGS -- Qg
Source-to-Source Voltage, VSS -- V
IT13861
ASO
Gate-to-Source Voltage, VGS -- V
VSS=10V IS=6A
ISP=60A
Source Current, IS -- A
PW100s 100 s 1m s
3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13
IS=6A
Operation in this area is limited by RSS(on).
ms DC 10 op 0ms era tio n
10
Total Gate Charge, Qg -- nC
1.8 1.6
IT13811
PT -- Ta
When mounted on ceramic substrate (5000mm20.8mm)
0.1 7 5 Ta=25C 3 Single pulse 2 When mounted on ceramic substrate (5000mm20.8mm) 0.01 2 3 5 7 1.0 2 3 5 7 10 23 5 0.01 2 3 5 7 0.1 Source-to-Source Voltage, VSS -- V IT13594
Total Dissipation, PT -- W
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT13595
No. A1177-5/6
EFC4606
Note on usage : Since the EFC4606 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice.
PS No. A1177-6/6

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